elektronische bauelemente stt3981 -1.6 a, -20 v, rds(on) 180 m p-channel enhancement mode mos.fet 10-feb -2010 rev. c page 1 of 5 rohs compliant product a suffix of ?-c? specifi es halogen and lead-free description the stt3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the stt3981 is universally used for all commercial-industrial applications. features z low on-resistance z low gate charge package dimensions absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current 3 i d @t a =25 i d @t a =70 -1.6 -1.3 a pulsed drain current 1 i dm -8 a power dissipation p d @t a =25 0.8 w linear derating factor 0.006 w/ operating junction and storage temperature range t j , t stg -55 ~ +150 thermal data parameter symbol ratings unit thermal resistance junction-ambient 3 (max) r ja 150 /w millimeter millimeter ref. min. max. ref. min. max. a 1.10 max l 0.45 ref a1 0 0.10 l1 0.60 ref a2 0.70 1.00 0 10 c 0.12 ref b 0.30 0.50 d 2.70 3.10 e 0.95 ref e 2.60 3.00 e1 1.90 ref e1 1.40 1.80
elektronische bauelemente stt3981 -1.6 a, -20 v, rds(on) 180 m p-channel enhancement mode mos.fet 01 0-feb -2010 rev. c page 2 of 5 electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min typ max unit test conditions static drain-source breakdown voltage bv dss -20 - - v v gs = 0, i d =250 ua gate threshold voltage v gs(th) -0.4 - -1.1 v v ds = v gs , i d =250 ua gate leakage current i gss - - 100 na v gs = 8 v drain-source leakage current (tj=25 ) - - -1 v ds = -20 v, v gs = 0 drain-source leakage current (tj=70 ) i dss - - -20 ua v ds = -16 v, v gs = 0 - 100 150 v gs = -4.5 v, i d = -1.9 a - 160 210 v gs = -2.5 v, i d = -1.6 a drain-source on-resistance r ds(on) - 260 300 m ? v gs = -1.8 v, i d = -0.7 a forward transconductance g fs - 4 - s v ds = -5v, i d = -1.9a diode forward voltage 2 v sd - -0.84 -1.1 v i s = -1.0a, v gs = 0v dynamic total gate charge 2 q g - 6 7.5 gate-source charge q gs - 0.52 - gate-drain (?miller?) charge q gd - 1.02 - nc i d = -1.9 a v ds = -10 v v gs = -4.5 v turn-on delay time 2 t d(on) - 50 65 rise time t r - 40 60 turn-off time t d(off) - 168 180 fall time t f - 64 75 ns v ds = -10 v i d = -1 a v gen = -4.5 v r g = 6 r l = 10 input capacitance ciss - 450 - output capacitance coss - 60 - reverse transfer capacitance crss - 47 - pf v gs = 0 v v d s = -15 v f = 1.0 mhz notes: 1. pulse width limited by maximum junction temperature. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 180 c/w when mounted on minimum copper pad.
elektronische bauelemente stt3981 -1.6 a, -20 v, rds(on) 180 m p-channel enhancement mode mos.fet 10-feb -2010 rev. c page 3 of 5 characteristic curves 0 1 2 3 4 5 6 7 8 012345 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) - - - - i d v gs gate-to-source voltage (v) drain current (a) i d v gs = 5 thru 3 v 2 v t c = 55 -c 125 c 1.5 v 25 c 2.5 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01234567 0 50 100 150 200 250 300 350 400 048121620 on-resistance vs. drain current v ds drain-to-source voltage (v) c capacitance (pf) on-resistance ( - - - - r ds(on) ) i d drain current (a) capacitance v gs = 4.5 v c oss c iss v gs = 1.8 v c rss v gs = 2.5 v - - - - 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 on-resistance vs. junction temperatur e v gs = 4.5 v i d = 1.9 a t j junction temperature ( c) r ds(on) on-resiistance (normalized) gate charg e qg - total gate charge (nc) vgs - gate-to -so rce vo ltag e (v) v ds =10v i d =1.9a 0 01234567 1 2 3 4 5 6 u
elektronische bauelemente stt3981 -1.6 a, -20 v, rds(on) 180 m p-channel enhancement mode mos.fet 10-feb -2010 rev. c page 4 of 5 - - - - 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd source-to-drain voltage (v) source current (a) i s 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v gs gate-to-source voltage (v) on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) i d = 1.9 a 0.2 0.1 0.0 0.1 0.2 0.3 50 25 0 25 50 75 100 125 150 threshold voltage t- - - -- j temperature ( c) i d = 250 a variance (v) v gs(th) 0.001 0 1 20 25 5 15 10 0.01 power (w) single pulse power, junction-to-ambient time (sec) 0.1 10 - - safe operating area, junction-to-case v ds drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 1 ms drain current (a) i d 0.1 t c = 25 c single pulse 10 ms 100 ms dc i dm limited i d(on) limited r ds(on) limited bv dss limited 10 s, 1 s
elektronische bauelemente stt3981 -1.6 a, -20 v, rds(on) 180 m p-channel enhancement mode mos.fet 10-feb -2010 rev. c page 5 of 5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 3 10 2 1 10 600 10 1 10 4 -- - - duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 132 c/w 3. t jm t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm - 10 3 10 2 1 10 1 10 4 -- - - 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 10
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